SEMIX453GD12E4C ? by semikron rev. 4 ? 16.12.2009 1 semix ? 33c gd trench igbt modules SEMIX453GD12E4C features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ? ac inverter drives ?ups ? electronic welding remarks ? case temperature limited to t c =125c max. ? product reliability results are valid for t j =150c absolute maximum ratings symbol conditions values unit igbt v ces 1200 v i c t j = 175 c t c =25c 683 a t c =80c 526 a i cnom 450 a i crm i crm = 3xi cnom 1350 a v ges -20 ... 20 v t psc v cc = 800 v v ge 20 v v ces 1200 v t j = 150 c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 544 a t c =80c 407 a i fnom 450 a i frm i frm = 3xi fnom 1350 a i fsm t p = 10 ms, sin 180, t j =25c 2430 a t j -40 ... 175 c module i t(rms) 600 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =150a v ge =15v chiplevel t j =25c 1.8 2.05 v t j = 150 c 2.2 2.4 v v ce0 t j =25c 0.8 0.9 v t j = 150 c 0.7 0.8 v r ce v ge =15v t j =25c 2.2 2.6 m ? t j = 150 c 3.3 3.6 m ? v ge(th) v ge =v ce , i c =18ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j = 150 c ma c ies v ce =25v v ge =0v f=1mhz 27.9 nf c oes f=1mhz 1.74 nf c res f=1mhz 1.53 nf q g v ge =- 8 v...+ 15 v 2550 nc r gint t j =25c 1.67 ? t d(on) v cc = 600 v i c =450a r g on =2 ? r g off =2 ? di/dt on = 4400 a/s di/dt off = 3900 a/s t j = 150 c 253 ns t r t j = 150 c 85 ns e on t j = 150 c 52 mj t d(off) t j = 150 c 629 ns t f t j = 150 c 130 ns e off t j = 150 c 67.8 mj r th(j-c) per igbt 0.065 k/w
SEMIX453GD12E4C 2 rev. 4 ? 16.12.2009 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f =450a v ge =0v chip t j =25c 2.1 2.46 v t j = 150 c 2.1 2.4 v v f0 t j =25c 1.1 1.3 1.5 v t j = 150 c 0.7 0.9 1.1 v r f t j =25c 1.4 1.9 2.1 m ? t j = 150 c 2.2 2.6 2.8 m ? i rrm i f =450a di/dt off = 5200 a/s v ge =-15v v cc = 600 v t j = 150 c 350 a q rr t j = 150 c 67 c e rr t j = 150 c 28 mj r th(j-c) per diode 0.11 k/w module l ce 20 nh r cc'+ee' res., terminal-chip t c =25c 0.7 m ? t c = 125 c 1m ? r th(c-s) per module 0.014 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm nm w 900 g temperatur sensor r 100 t c =100c (r 25 =5 k ? ) 493 5% ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k semix ? 33c gd trench igbt modules SEMIX453GD12E4C features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ? ac inverter drives ?ups ? electronic welding remarks ? case temperature limited to t c =125c max. ? product reliability results are valid for t j =150c
SEMIX453GD12E4C ? by semikron rev. 4 ? 16.12.2009 3 fig. 1: typ. output ch aracteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SEMIX453GD12E4C 4 rev. 4 ? 16.12.2009 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching times vs. gate resistor r g fig. 9: typ. transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode recovery charge
SEMIX453GD12E4C ? by semikron rev. 4 ? 16.12.2009 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. semix 33c pinout
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